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Electrical characteristics of silicon nitride on silicon and InGaAs as a function of the insulator stoichiometry
Bagnoli, Paolo Emilio; Piccirillo, Agnese; Gobbi, Angelo Luiz; Giannetti, Romano (01/10/1991)The interface state density along the semiconductor energy gap and the fixed charge were evaluated in SiNx/InGaAs and SiNx/Si interfaces. The insulator layer was deposited by plasma-enhanced chemical vapour deposition ... -
Identification of silicon nitride/InGaAs interface states
Piccirillo, Agnese; Gobbi, Angelo Luiz; Ferraris, Monica; Giannetti, Romano; Bagnoli, Paolo Emilio (23/04/1990)Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high?frequency capacitance?voltage (C?V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified ...