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Mostrando ítems 1-2 de 2

    • Model for crystallization kinetics: Deviations from Kolmogorov-Johnson-Mehl-Avrami kinetics 

      Castro Ponce, Mario; Dominguez Adame, F.; Sánchez, A.; Rodríguez Rodríguez, Tomás (01/10/1999)
      We propose a simple and versatile model to understand the deviations from the well-known Kolmogorov-Johnson-Mehl-Avrami kinetics theory found in metal recrystallization and amorphous semiconductor crystallization. We analyze ...

    • Structural improvement of SiGe films by C and F implantation and solid phase crystallization 

      Rodríguez Domínguez, Andrés; Olivares Roza, Jimena; Sangrador García, Jesús; Rodríguez Rodríguez, Tomás; Ballesteros Pérez, Carmen Inés; Castro Ponce, Mario; Gwilliam, Russell M. (01/02/2001)
      The crystallization kinetics and film microstructure of poly-SiGe layers obtained by solid-phase crystallization of unimplanted, C and F-implanted amorphous SiGe films have been studied. After crystallization, the F and C ...