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Identification of silicon nitride/InGaAs interface states
dc.contributor.author | Piccirillo, Agnese | es-ES |
dc.contributor.author | Gobbi, Angelo Luiz | es-ES |
dc.contributor.author | Ferraris, Monica | es-ES |
dc.contributor.author | Giannetti, Romano | es-ES |
dc.contributor.author | Bagnoli, Paolo Emilio | es-ES |
dc.date.accessioned | 2019-11-27T04:19:52Z | |
dc.date.available | 2019-11-27T04:19:52Z | |
dc.date.issued | 23/04/1990 | es_ES |
dc.identifier.issn | 0003-6951 | es_ES |
dc.identifier.uri | http://hdl.handle.net/11531/43619 | |
dc.description | Artículos en revistas | es_ES |
dc.description.abstract | es-ES | |
dc.description.abstract | Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high?frequency capacitance?voltage (C?V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si?. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds. | en-GB |
dc.format.mimetype | application/pdf | es_ES |
dc.language.iso | en-GB | es_ES |
dc.rights | es_ES | |
dc.rights.uri | es_ES | |
dc.source | Revista: Applied Physics Letters, Periodo: 1, Volumen: 56, Número: 17, Página inicial: 1661, Página final: 1663 | es_ES |
dc.subject.other | Instituto de Investigación Tecnológica (IIT) | es_ES |
dc.title | Identification of silicon nitride/InGaAs interface states | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.description.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/restrictedAccess | es_ES |
dc.keywords | es-ES | |
dc.keywords | en-GB | |
dc.identifier.doi | 10.1063/1.103109 | es_ES |
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