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Single-phase-field model of stepped surfaces
dc.contributor.author | Castro Ponce, Mario | es-ES |
dc.contributor.author | Hernández Machado, Aurora | es-ES |
dc.contributor.author | Cuerno Rejado, Rodolfo | es-ES |
dc.date.accessioned | 2016-01-15T11:18:34Z | |
dc.date.available | 2016-01-15T11:18:34Z | |
dc.date.issued | 2009-02-01 | es_ES |
dc.identifier.issn | 1539-3755 | es_ES |
dc.identifier.uri | https:doi.org10.1103PhysRevE.79.021601 | es_ES |
dc.description | Artículos en revistas | es_ES |
dc.description.abstract | es-ES | |
dc.description.abstract | We formulate a phase-field description of step dynamics on vicinal surfaces that makes use of a single dynamical field, at variance with previous analogous works in which two coupled fields are employed, namely, a phase-field proper plus the physical adatom concentration. Within an asymptotic sharp interface limit, our formulation is shown to retrieve the standard Burton-Cabrera-Frank model in the general case of asymmetric attachment coefficients «Ehrlich-Schwoebel effect». We confirm our analytical results by means of numerical simulations of our phase-field model. Our present formulation seems particularly well adapted to generalization when additional physical fields are required. | en-GB |
dc.format.mimetype | application/pdf | es_ES |
dc.language.iso | en-GB | es_ES |
dc.rights | es_ES | |
dc.rights.uri | es_ES | |
dc.source | Revista: Physical Review E, Periodo: 1, Volumen: online, Número: 2, Página inicial: 021601-1, Página final: 021601-8 | es_ES |
dc.subject.other | Instituto de Investigación Tecnológica (IIT) | es_ES |
dc.title | Single-phase-field model of stepped surfaces | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.description.version | info:eu-repo/semantics/publishedVersion | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/restrictedAccess | es_ES |
dc.keywords | es-ES | |
dc.keywords | Theory and models of crystal growth; physics of crystal growth, crystal morphology, and orientation, Interface structure and roughness, Molecular, atomic, ion, and chemical beam epitaxy ... | en-GB |
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