Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
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01/02/2019Estado
info:eu-repo/semantics/publishedVersionMetadatos
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Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
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Artículos en revistasISSN
2059-8521Palabras Clave
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devicesSelective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices