Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Abstract
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Tipo de Actividad
Artículos en revistasISSN
2059-8521Palabras Clave
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devicesSelective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices