Structural improvement of SiGe films by C and F implantation and solid phase crystallization
Date
01/02/2001Author
Estado
info:eu-repo/semantics/publishedVersionMetadata
Show full item recordAbstract
Structural improvement of SiGe films by C and F implantation and solid phase crystallization
Tipo de Actividad
Artículos en revistasISSN
0040-6090Palabras Clave
sige, ion implantation, solid phase crystallization, thin film transistors, silicon ion-implantation, lpcvd