Structural improvement of SiGe films by C and F implantation and solid phase crystallization
Fecha
01/02/2001Autor
Estado
info:eu-repo/semantics/publishedVersionMetadatos
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Structural improvement of SiGe films by C and F implantation and solid phase crystallization
Tipo de Actividad
Artículos en revistasISSN
0040-6090Palabras Clave
sige, ion implantation, solid phase crystallization, thin film transistors, silicon ion-implantation, lpcvd