Keywords
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Abstract
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Selective area growth of InxGa1-xAs nanowires on HfO2 templates for highly scaled n-MOS devices
Información detallada
Materias, derechos, colecciones e identificadores
URI / Handle
http://hdl.handle.net/11531/37456Rights
Creative Commons Reconocimiento-NoComercial-SinObraDerivada España