Keywords
., Series resistance GaAs solar cells AlGaAs LEDs Emitter resistivity Metal-semiconductor contact
Determination of the origin of the series resistance through electroluminescence measurements of GaAs and Al x Ga 1- x As solar cells and LEDs
Abstract
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A simple method to determine the origin of the total series resistance in GaAs and AlGaAs solar cells and LEDs is given. It allows to discriminate between series resistance effects due to the emitter resistivity and parasitic resistance effects mainly due to the metal–semiconductor contact and the metal of the grid. The method consists of fitting the current–voltage and light intensity–current characteristics. The former is affected by the total series resistance and the latter just by the series resistance due to non uniform current distribution.
A simple method to determine the origin of the total series resistance in GaAs and AlGaAs solar cells and LEDs is given. It allows to discriminate between series resistance effects due to the emitter resistivity and parasitic resistance effects mainly due to the metal–semiconductor contact and the metal of the grid. The method consists of fitting the current–voltage and light intensity–current characteristics. The former is affected by the total series resistance and the latter just by the series resistance due to non uniform current distribution.
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URI / Handle
https://doi.org/10.1016/S0038-1101(97)00274-8Rights
Creative Commons Reconocimiento-NoComercial-SinObraDerivada España