Identification of silicon nitride/InGaAs interface states

Abstract

Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high?frequency capacitance?voltage (C?V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si?. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds.