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dc.contributor.authorAuger, M.A.es-ES
dc.contributor.authorVázquez Burgos, Luís Fernandoes-ES
dc.contributor.authorCuerno Rejado, Rodolfoes-ES
dc.contributor.authorCastro Ponce, Marioes-ES
dc.contributor.authorJergel, M.es-ES
dc.contributor.authorSánchez, O.es-ES
dc.date.accessioned2016-05-23T03:06:48Z-
dc.date.available2016-05-23T03:06:48Z-
dc.date.issued2006-01-15es_ES
dc.identifier.issn2469-9950es_ES
dc.identifier.urihttps:doi.org10.1103PhysRevB.73.045436es_ES
dc.descriptionArtículos en revistases_ES
dc.description.abstractes-ES
dc.description.abstractWe study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values alpha(loc)=1.0 and beta(loc)=0.39, and global exponent values alpha=1.7 and beta=0.67, with a coarsening exponent of 1z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering.en-GB
dc.format.mimetypeapplication/pdfes_ES
dc.language.isoen-GBes_ES
dc.rightses_ES
dc.rights.uries_ES
dc.sourceRevista: Physical Review B, Periodo: 1, Volumen: online, Número: 4, Página inicial: 045436.1, Página final: 045436.7es_ES
dc.subject.otherInstituto de Investigación Tecnológica (IIT)es_ES
dc.titleIntrinsic anomalous surface roughening of TiN films deposited by reactive sputteringes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.description.versioninfo:eu-repo/semantics/publishedVersiones_ES
dc.rights.accessRightsinfo:eu-repo/semantics/restrictedAccesses_ES
dc.keywordses-ES
dc.keywordschemical-vapor-deposition, x-ray reflectivity, growth, roughness, si, cu, microstructure, instability, interfaces, densityen-GB
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