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dc.contributor.authorReyna, Rosa F.es-ES
dc.contributor.authorMartí, Antonioes-ES
dc.contributor.authorMaroto Carro, Juan Carloses-ES
dc.date.accessioned2025-02-05T11:21:32Z-
dc.date.available2025-02-05T11:21:32Z-
dc.date.issued1998-04-06es_ES
dc.identifier.issn0038-1101es_ES
dc.identifier.urihttps://doi.org/10.1016/S0038-1101(97)00274-8es_ES
dc.identifier.urihttp://hdl.handle.net/11531/97262-
dc.descriptionArtículos en revistases_ES
dc.description.abstract.es-ES
dc.description.abstractA simple method to determine the origin of the total series resistance in GaAs and AlGaAs solar cells and LEDs is given. It allows to discriminate between series resistance effects due to the emitter resistivity and parasitic resistance effects mainly due to the metal–semiconductor contact and the metal of the grid. The method consists of fitting the current–voltage and light intensity–current characteristics. The former is affected by the total series resistance and the latter just by the series resistance due to non uniform current distribution.en-GB
dc.format.mimetypeapplication/pdfes_ES
dc.language.isoen-GBes_ES
dc.rightsCreative Commons Reconocimiento-NoComercial-SinObraDerivada Españaes_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/es_ES
dc.sourceRevista: Solid-State Electronics, Periodo: 1, Volumen: 42, Número: 4, Página inicial: 567, Página final: 571es_ES
dc.titleDetermination of the origin of the series resistance through electroluminescence measurements of GaAs and Al x Ga 1- x As solar cells and LEDses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.description.versioninfo:eu-repo/semantics/publishedVersiones_ES
dc.rights.holderes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.keywords.es-ES
dc.keywordsSeries resistance GaAs solar cells AlGaAs LEDs Emitter resistivity Metal-semiconductor contacten-GB
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