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dc.contributor.authorBasso, Giovannies-ES
dc.contributor.authorCrupi, Felicees-ES
dc.contributor.authorNeri, Brunoes-ES
dc.contributor.authorGiannetti, Romanoes-ES
dc.contributor.authorLombardo, Salvoes-ES
dc.descriptionCapítulos en libroses_ES
dc.description.abstractDielectric breakdown of ultra-thin oxide MOS structures of integrated circuits is preceded by a precursory stage characterized by random on-off fluctuations of the current tunneling through the oxide. In this paper a new version of a low noise measurement system capable of monitoring these phenomena in a band of 1 kHz is presented. The instrument, controlled by a Personal Computer which stores and elaborates the acquired data, is capable of recognizing the current fluctuations announcing the proximity of the breakdown, so allowing the interruption of the test just a few seconds before the destruction of the sample. Some preliminary observations, made possible by the use of this new analysis tool, are presented in the paper.en-GB
dc.publisherSin editorial (Venecia, Italia)es_ES
dc.sourceLibro: 16th IEEE Instrumentation and Measurement Technology Conference - IMTC 1999, Página inicial: 1923-1926, Página final:es_ES
dc.subject.otherInstituto de Investigación Tecnológica (IIT)es_ES
dc.titleA novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structureses_ES
dc.keywordsDielectric breakdown, Electric breakdown, Voltage, Fluctuations, Instruments, Stress, Low-frequency noise , Noise measurement, Microcomputers, Testingen-GB

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