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A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures

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IIT-99-120A.pdf (356.0Kb)
Fecha
24/05/1999
Autor
Basso, Giovanni
Crupi, Felice
Neri, Bruno
Giannetti, Romano
Lombardo, Salvo
Estado
info:eu-repo/semantics/publishedVersion
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Resumen
 
 
Dielectric breakdown of ultra-thin oxide MOS structures of integrated circuits is preceded by a precursory stage characterized by random on-off fluctuations of the current tunneling through the oxide. In this paper a new version of a low noise measurement system capable of monitoring these phenomena in a band of 1 kHz is presented. The instrument, controlled by a Personal Computer which stores and elaborates the acquired data, is capable of recognizing the current fluctuations announcing the proximity of the breakdown, so allowing the interruption of the test just a few seconds before the destruction of the sample. Some preliminary observations, made possible by the use of this new analysis tool, are presented in the paper.
 
URI
http://hdl.handle.net/11531/40678
A novel characterization tool for the study of dielectric breakdown of ultra-thin oxide MOS structures
Tipo de Actividad
Capítulos en libros
Materias/ categorías / ODS
Instituto de Investigación Tecnológica (IIT)
Palabras Clave

Dielectric breakdown, Electric breakdown, Voltage, Fluctuations, Instruments, Stress, Low-frequency noise , Noise measurement, Microcomputers, Testing
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