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http://hdl.handle.net/11531/43619| Título : | Identification of silicon nitride/InGaAs interface states |
| Autor : | Piccirillo, Agnese Gobbi, Angelo Luiz Ferraris, Monica Giannetti, Romano Bagnoli, Paolo Emilio |
| Fecha de publicación : | 23 |
| Resumen : | Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high?frequency capacitance?voltage (C?V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si?. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds. |
| Descripción : | Artículos en revistas |
| URI : | http://hdl.handle.net/11531/43619 |
| ISSN : | 0003-6951 |
| Aparece en las colecciones: | Artículos |
Ficheros en este ítem:
| Fichero | Descripción | Tamaño | Formato | |
|---|---|---|---|---|
| IIT-90-008A.pdf | 2,38 MB | Adobe PDF | Visualizar/Abrir Request a copy |
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