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http://hdl.handle.net/11531/7741
Título : | Order enhancement and coarsening of self-organized silicon nanodot patterns induced by ion-beam sputtering |
Autor : | Gago Fernández, Raúl Vázquez Burgos, Luís Fernando Plantevin, O. Metzger, T.H. Muñoz García, J. Cuerno Rejado, Rodolfo Castro Ponce, Mario |
Fecha de publicación : | 9-jun-2008 |
Resumen : | The temporal evolution of the characteristic wavelength (lambda) and ordering range (xi) of self-organized nanodot patterns induced during Ar%2B ion beam sputtering on Si(001) and Si(111) surfaces is studied by atomic force microscopy and grazing incidence x-ray diffraction. The patterns exhibit initial coarsening of lambda (up to 54-60 nm) and increase in xi (up to 400-500 nm) after which both features stabilize. The pattern formation is only weakly controlled by the crystallographic surface orientation, Si(111) surfaces showing a faster evolution into a proper stationary state. This trend is attributed to a higher sputtering rate at this orientation, as confirmed by theoretical simulations. (c) 2006 American Institute of Physics. |
Descripción : | Artículos en revistas |
URI : | https:doi.org10.10631.2398916 |
ISSN : | 0003-6951 |
Aparece en las colecciones: | Artículos |
Ficheros en este ítem:
Fichero | Descripción | Tamaño | Formato | |
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IIT-06-095A.pdf | 225,57 kB | Adobe PDF | Visualizar/Abrir Request a copy |
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