Por favor, use este identificador para citar o enlazar este ítem: http://hdl.handle.net/11531/97262
Título : Determination of the origin of the series resistance through electroluminescence measurements of GaAs and Al x Ga 1- x As solar cells and LEDs
Autor : Reyna, Rosa F.
Martí, Antonio
Maroto Carro, Juan Carlos
Fecha de publicación : 6-abr-1998
Resumen : .
A simple method to determine the origin of the total series resistance in GaAs and AlGaAs solar cells and LEDs is given. It allows to discriminate between series resistance effects due to the emitter resistivity and parasitic resistance effects mainly due to the metal–semiconductor contact and the metal of the grid. The method consists of fitting the current–voltage and light intensity–current characteristics. The former is affected by the total series resistance and the latter just by the series resistance due to non uniform current distribution.
Descripción : Artículos en revistas
URI : https://doi.org/10.1016/S0038-1101(97)00274-8
http://hdl.handle.net/11531/97262
ISSN : 0038-1101
Aparece en las colecciones: Artículos

Ficheros en este ítem:
Fichero Tamaño Formato  
20241218144352813_1-s2.0-S0038110197002748-main.pdf313,58 kBAdobe PDFVisualizar/Abrir


Los ítems de DSpace están protegidos por copyright, con todos los derechos reservados, a menos que se indique lo contrario.