Nanoscale selective plasma etching of ultrathin HfO2 layers for advanced complementary metal-oxide-semiconductor devices
Abstract
Presentamos un proceso de grabado en seco fiable para la fabricación de nanoestructuras profundas en capas ultrafinas (16 nm) de HfO2 depositadas sobre substratos de GaAs. We present a reliable dry-etch process for patterning deep-submicron structures in utra-thin (16 nm) HfO2 layers deposited on GaAs substrates.